A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes
نویسندگان
چکیده
Conventional deep-ultraviolet (UV) light-emitting diodes (LEDs) based on AlGaN crystals have extremely low light-emission efficiencies due to the absorption in p-type GaN anode contacts. UV-light-transparent structures are considered as one of solutions increase a light output power. To this end, present study focuses developing transparent homoepitaxial tunnel junction (TJ) deep-UV LED. Deep-UV LEDs composed n+/p+-type TJs were fabricated under growth condition that reduced carrier compensation n+-type layers. The developed LED achieved an operating voltage 10.8 V direct current (DC) operation 63 A cm−2, which is lowest values among devices homojunctions. In addition, magnesium zinc oxide (MgZnO)/Al reflective electrodes enhance power TJ was increased 57.3 mW cm−2 DC operation, 1.7 times higher than using conventional Ti/Al electrodes. combination AlGaN-based and MgZnO/Al contact allows further improvement This confirms promising UV-transmittance structure can achieve high light-extraction efficiency.
منابع مشابه
Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
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ژورنال
عنوان ژورنال: Crystals
سال: 2023
ISSN: ['2073-4352']
DOI: https://doi.org/10.3390/cryst13030524